1SS403,H3F parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Toshiba

Model:

1SS403,H3F

Description:

DIODE GEN PURP 200V 100MA USC

Stock:

20429

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

The market price fluctuates. Please consult the customer service for the actual price

Offer

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Parameters

Capacitance at different Vr and F

3pF @ 0V,1MHz

Current - reverse leakage at different Vr

1 µA @ 200 V

Current average rectification (Io)

100mA

Diode type

standard

Reverse recovery time (trr)

60 ns

Speed

Small signal=< 200mA(Io),arbitrarily speed

Supplier device packaging

USC

Voltage DC reverse (Vr) (maximum)

200 V

Voltage at different If - forward (Vf)

1.2 V @ 100 mA

packing

TR,CT

series

working temperature

Encapsulation/Housing

SC-76,SOD-323

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

1SS403,H3F（Diode rectifier）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20429,Price reference "real-time change" China/Hongkong。 1SS403,H3F package/specs, Download 1SS403,H3F、Datasheet。